NTE345
Silicon NPN Transistor
RF Power Amp, Driver

Description:

The NTE345 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V large-signal amplifier applications in industrial and commercial FM equipment operating to 175MHz. This device is ideally suited for marine radio applications.

Features:

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO     18V
Collector-Base Voltage, VCBO     36V
Emitter-Base Voltage, VEBO     4V
Continuous Collector Current, IC     5A
Total Device Dissipation (TC = +25°C), PD     65W
            Derate Above 25°C     370mW/°C
Operating Junction Temperature Range, TJ     -65° to +200°C
Storage Temperature Range, Tstg     -65° to +200°C

Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0 18 - - V
Collector-Base Breakdown Voltage V(BR)CBO IC = 15mA, IE = 0 36 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 4 - - V
ON Characteristics
DC Current Gain hFE IC = 1A, VCE = 5V 5 - -  
Dynamic Characteristics
Output Capacitance Cob VCB = 15V, IE = 0, f = 0.1 to 1MHz - 110 130 pF
Functional Tests (VCC = 13.6V unless otherwise specified)
Common-Emitter Amplifier Power Gain GPE Pout = 30W, f = 160MHz 9 10 - dB
Collector Efficiency   Pout = 30W, f = 160MHz 60 - - %

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