Description:
The 2N3501 is a silicon NPN transistor in a 
TO39 type package designed for amplifier, 
frequency mul-tiplier, or oscillator applications 
in military and industrial equipment. Suitable 
for use as output driver or pre driver stages, in
VHF and UHF equipment. 



Max collector to basis voltage 300V 
Max collector to emitter voltage 200V 
Max collector current 500 mA 
Max junction temperature 200 C 
Max dissipation at 25 C free air 1 W 
Min cut-off frequency 500 MHz 
Transistor gain factor 10/200 (Ic=100 mA)